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GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1600

The O1600 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6 to 18 GHz. The isolation is greater than 15 dB, and is ideally suited for microwave hybrid integrated circuits and multiple applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1607

O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1608

The O1608 GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 8 to 12 GHz. The isolation is greater than 17 dB, and the static level is Class 1C. It is ideally suited for applications. Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O493

The O493 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3~9 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O494

O494 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18 GHz. The isolation degree is more than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O495

O495 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 12~26.5 GHz. The isolation degree is more than 15dB, and it is very suitable for microwave hybrid integrated circuits and multi-chips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O496

The O496 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 18~40 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O497

The O497 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 18 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O505

O505 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.5~6.0GHz, and the isolation is more than 15dB, which is very suitable for microwave hybrid integrated circuits and Multi-chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O508

O508 type GaAs monolithic 4-way zero-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O509

O509 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.