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GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1601

The O1601 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 0.5~1.5GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1602

O1602 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1.0~3.0 GHz. The isolation degree is more than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1603

O1603 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.0~6.0GHz, and the isolation is greater than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1604

O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1639

O1639 A GaAs monolithic chipset successfully divided into phase-shifted chips, featuring low insertion loss, high-precision phase shift, small amplitude fluctuation, and excellent port standing wave characteristics in the frequency range of 1.2 to 2.4 GHz, making it ideal for applications. Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1649

The O1649 GaAs monolithic 0 degree power splitter has lowinsertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 6.0 to 18 GHz. The isolation is greater than 17 dB, and the static level is Class 1B. It is very suitable for applications Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O498

O498 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O500

The O500 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 8 to 12 GHz. The isolation is greater than 15 dB, and it is very suitable for microwave hybrid integrated circuits and many applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O501

The O501 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 14 to 18 GHz. The isolation is greater than 15 dB, and is very suitable for microwave hybrid integrated circuits and multiple applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O502

The O502 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 12~18 GHz. The isolation degree is more than 18 dB, and it is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O506

O506 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz. The isolation degree is more than 17dB, and it is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.