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无源产品
5G
Integrated Driver Amplifier O228GSM3
The O228GSM3 is a monolithic mid-power amplifier operating at 6-15GHz. It provides 15dB gain, 18dBm P1dB output power, and 20% power-added efficiency at a single-supply 5V supply voltage.
The amplifier uses a 3x3mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Driver Amplifier O228GSM3B
O228GSM3B is a monolithic medium power amplifier operating at 6-18GHz. It provides 15dB gain, 18dBm P1dB output power, and 20% power-added efficiency at a single-supply 5V supply voltage.
The amplifier uses a 3x3mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Driver Amplifier O553SM4
The O553SM4 is a low noise amplifier operating at 0.8-6.5 GHz. It provides 21dB gain and 17dBm P1dB output power at 65mA operating current.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation.
The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Driver Amplifier O553SM84
The O553SM84 is an integrated amplifier operating at 0.8-6.0 GHz. Built-in bias circuit provides 20dB gain and 17dBm P1dB output power at 65mA operating current.
The amplifier adopts 5x7mm surface-mounting cermet shell, fully sealed, and the bottom surface needs to be grounded in a large area. It is suitable for the reflow soldering installation process, and the lead wire must be hand-welded.
Integrated Driver Amplifier O556SM84
The O556SM84 is an integrated amplifier operating at 2.0-6.0 GHz. Built-in bias circuit provides 24dB gain and 14dBm P1dB output power at 50mA operating current.
The amplifier adopts 5x7mm surface-mounting cermet shell, fully sealed, and the bottom surface needs to be grounded in a large area. It is suitable for the reflow soldering installation process, and the lead wire must be hand-welded.
Integrated Driver Amplifier O568QF4
The O568QF4 is a driver amplifier that operates from 2 to 6 GHz. It can provide 30dB power gain and 30dBm saturated output power under the power supply +28V operating voltage.
The amplifiers are packaged in a metal package and can be hermetically sealed. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Power Amplifier O1193SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1194SM7H
The O1193SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. At +28V operating voltage, 21dB power gain, 40dBm saturated output power, and 45%power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1195SM7H
The O1195SM7H is a GaN integrated power amplifier operating from 4.4 to 5.1 Ghz. At +28V operating voltage, it provides 19dB of power gain, 40dBm of saturated output power, and 47% of power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1196SM7H
The O1196SM7H is a GaN integrated power amplifier operating from 7 to 9 GHz.It provides 21dB of power gain, 41dBm of saturated output power, and 42% of power-added efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1198SM7H
The O1198SM7H is a GaN integrated power amplifier operating from 5 to 6 GHz. It provides 21dB power gain, 41dBm saturated output power, and 45% power efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O242SM4
The O242SM4 is a 2.2-3.5GHz power amplifier that operates from a single supply and provides 23dB of gain and 25dBm of saturated output power at an operating voltage of +5V.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation.
The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Power Amplifier O253SM7H
The O253SM7H is a GaN integrated power amplifier operating from 8 to 12 GHz. With a +28V operating voltage, it provides 22dB of power gain, 43dBm of saturated output power, and 38% power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.