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Ferrite Devices OIS-290310-03-20-28
Model OIS-290310-03-20-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 29 to31 GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.3dB typical and a much shorter insertion length for system integration. As atrade off, the waveguide junction isolator only offers a typical isolation of20dB.
The input and output ports are WR-28 waveguides with UG-599/U flanges.
Ferrite Devices OIS-34-H
Model OIS-34-H is a WR-34,waveguide junction isolator that covers thefrequency range of 22 to 33GHz.
The full band isolator is designed andmanufactured to provide a low insertion loss of 0.45dB typical with goodflatness. The isolator also offers a moderate isolation of 19dB for systemintegration and a high power handling.
The input and output ports are WR-34waveguides with UG-1530/U flanges.
Ferrite Devices OIS-340360-03-20-28
Model OIS-340360-03-20-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 34 to 36GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.3dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 20dB.
The input and output ports are WR-28 waveguides with UG-599/Uflanges.
Ferrite Devices OIS-340360-05-18-28
Model OIS-340360-05-18-28 is a Ka band waveguide junction isolator that covers the frequency range of 33.6 to 36.4GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.5 dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 18 dB.
The input and output ports are WR-28 waveguides withUG-599/U flanges.
Ferrite Devices OIS-370400-05-18-28
Model OIS-370400-05-18-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 37 to 40GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.5dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 18dB.
The input and output ports are WR-28 waveguides with UG-599/Uflanges.
Ferrite Devices OIS-400440-07-18-2224F-S
Model OIS-400440-07-18-2224F-S is a Q band Iso-adapter that covers the
frequencyrange of40to44GHz.The iso-adapter offers nominal 0.7 dB insertion loss
and an18dB typical isolation.The iso-adapter is designed and fabricated to
bridge thewaveguide to coax interface directly, yet exhibits the port isolation
to improvethe system performance.
The input port of the model isWR-22waveguide withstandardUG-383/U
flange and 2.4 mm (F) connector as output port.Themodel number with the
reversed input and output ports is SNA-4034430718-2F22-S1
Ferrite Devices OIS-42
Model OIS-42 is a K band,wave guide junction isolator that covers thefrequency range of 18 to 26.5 GHz.
The full band isolator is designed andmanufactured to provide a low insertion loss of 0.3dB typical with good flatness.Compared to a Faraday isolator,it offers a much shorter insertion lengthfor systemintegration.
The isolator also offers a moderate isolation of 20dB. Theinput and output ports are WR-42waveguides with UG-595/U flanges.
Ferrite Devices OIS-460480-05-18-22
Model OIS-460480-05-18-22 is a Q band waveguide junction isolator that covers the frequency range of 46 to 48GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of0.5 dB nominal and a much shorter insertion length for systemintegration. As a tradeoff, the waveguide junction isolator only offers anisolation of 18 dB typical. The input and output ports are WR-22waveguides with UG-383/U flanges. Various configurations andfrequency ranges are offered under different model numbers.
Ferrite Devices OIS-540560-10-16-15
Model OIS-540560-10-16-15 is a V band waveguide junction isolator that covers the frequency range of 54 to 56GHz.
Compared with a Faraday isolator, the waveguidejunction isolator offers a lower insertion loss of 1.0 dBnominal and a much shorter insertion length for systemintegration. As a tradeoff, the waveguide junction isolatoronly offers a typical isolation of 16 dB. The input and outputports are WR-15 waveguides with UG-385/U flanges.
Ferrite Devices OIS-590610-10-16-15
Model OIS-590610-10-16-15 is a V band waveguide junction isolator that covers
the frequency range of 59 to 61GHz.
Compared with a Faraday isolator, the waveguidejunction isolator offers a
lower insertion loss of 1.0 dBnominal and a much shorter insertion length for
systemintegration.
As a tradeoff, the waveguide junction isolatoronly offers a typical isolation of
16 dB.
The input and outputports are WR-15 waveguides with UG-385/U flanges.
GaAs Monolithic Integrated Power Amplifier O210
The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O212
The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O214
The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O220
The O220 is a GaAs monolithic integrated power amplifier chip operating at 15.0-17.5 Ghz delivering 20dB of power gain and 36dBm of saturated output power with 100us pulse width, 10% duty cycle, and +8 V operation. The power added efficiency 25%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.