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5G| Image | SKU | Max. Frequency (GHz) | Min. Frequency (GHz) | Noise Figure (dB) | Output IP3 (dBm) | P1dB Output Power (dBm) | Price | Buy | hf:att:pa_max-frequency-ghz | hf:att:pa_min-frequency-ghz | hf:att:pa_noise-figure-db | hf:att:pa_output-ip3-dbm | hf:att:pa_p1db-output-power-dbm |
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Monolithic Integrated (Dual) Bidirectional Amplifier O559
The O559 is a GaAs monolithic integrated bi-directional amplifier chip operating from 8.0-12.0GHz. It operates from a single +5V supply and provides 26dB of gain and 16dBm of P1dB of output power at 110mA.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O560
The O560 is a GaAs monolithic integrated bi-directional amplifier chip working in 8.0-12.0GHz. The transmit path can provide 27dB gain and 19.5dBm P1dB output power at a +5V and 175mA operating current. The receive path is at +5V and 55mA. At operating current, it provides 26dB gain and P1dB output power over 8dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O587
The O587 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 6dB of gain and 13dBm of P1dB output power at a +5V and 40mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O588
The O588 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 15dB of gain and 14dBm of P1dB output power at a +5V and 45mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O589
The O589 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1.0 to 4.5 GHz. It provides 13dB of gain and 17dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O590
The O590 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1 to 5 GHz. It provides 19dB of gain and 16dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O592
The O592 is a GaAs monolithic integrated low bi-directional amplifier chip that operates from 2 to 20 GHz and provides 14dB gain and 13dBm P1dB output power at a +5V, 65mA operating current.
The amplifier chip uses on-chip via metallization process to ensure good grounding, the back of the chip is metallized, suitable for eutectic sintering or conductive adhesive bonding process.
Monolithic Integrated (Dual) Bidirectional Amplifier O593
The O593 is a GaAs monolithic integrated bi-directional amplifier chip operating from 4.0-8.0GHz. It operates from a single +5V supply and provides 17dB of gain and 13dBm of P1dB output power at a 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O594
The O594 is a GaAs monolithic integrated bi-directional amplifier chip operating from 7.0 to 13.0 GHz. It operates from a single +5V supply and provides 18dB gain and 10dBm P1dB output power at 50mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O595
The O595 is a GaAs monolithic integrated bi-directional amplifier chip operating from 0.5-2.0GHz. It operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O596
The O596 is a GaAs monolithic integrated bi-directional amplifier chip operating from 0.7-3.0GHz. It operates from a single +5V supply and provides 12dB gain and 17dBm P1dB output power at 55mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O597
The O597 is a 1.0-3.0GHz GaAs monolithic integrated bi-directional amplifier chip that operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O598
The O598 is a 1.0-3.0GHz GaAs monolithic integrated bi-directional amplifier chip. It operates from a single +5V supply and provides 21dB gain and 15.5dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
The O599 is a GaAs monolithic integrated bi-directional amplifier chip operating from 3.0-7.0GHz. It operates from a single +5V supply and provides 21dB gain and 18dBm P1dB output power at 80mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.