Monolithic Integrated (Dual) Bidirectional Amplifier O596
The O596 is a GaAs monolithic integrated bi-directional amplifier chip operating from 0.7-3.0GHz. It operates from a single +5V supply and provides 12dB gain and 17dBm P1dB output power at 55mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The O241 is a 1.2-1.4GHz GaAs monolithic integrated power amplifier chip, which provides 21dB power gain and 26dBm saturated output power at + 5V operating voltage with power added efficiency of 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip is metallized for eutectic sintering.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Driver Amplifier O579
The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O242
The O242 is a GaAs monolithic integrated power amplifier chip operating at 2.2 ~ 3.5GHz, which provides 22dB power gain and 29dBm saturated output power at + 9V operating voltage with power added efficiency of 35%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O570
The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O239
The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O224
The O224 is a GaAs monolithic integrated power amplifier operating at 12.8 to 14.6GHz and delivers 23dB of power gain and 32dBm of saturated output power at a + 5V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O562
The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.