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Integrated Mixer O393SM4
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Integrated Mixer O391SM4

O391SM4 is a GaAs integrated IQ mixer.It can be used as an image frequency mixer.It has low conversion loss and excellent image rejection in the LO&RF frequency range of 3.5~7.0GHz. It is very suitable for microwave applications. Hybrid integrated circuits. The mixer uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Mixer O393SM4
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Integrated Mixer O393SM4

The O393SM4 is a GaAs integrated IQ mixer that can be used as an image mixer. It has low conversion loss and excellent image rejection in the LO&RF frequency range of 8.0 to 12.0 GHz, making it ideal for microwave applications. Hybrid integrated circuits. The mixer uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1193SM7H

The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided. The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1194SM7H

The O1193SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. At +28V operating voltage, 21dB power gain, 40dBm saturated output power, and 45%power efficiency can be provided. The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1195SM7H

The O1195SM7H is a GaN integrated power amplifier operating from 4.4 to 5.1 Ghz. At +28V operating voltage, it provides 19dB of power gain, 40dBm of saturated output power, and 47% of power-added efficiency. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1196SM7H

The O1196SM7H is a GaN integrated power amplifier operating from 7 to 9 GHz.It provides 21dB of power gain, 41dBm of saturated output power, and 42% of power-added efficiency at a +28V operating voltage. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1198SM7H

The O1198SM7H is a GaN integrated power amplifier operating from 5 to 6 GHz. It provides 21dB power gain, 41dBm saturated output power, and 45% power efficiency at a +28V operating voltage. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O222GSM5

The O222GSM5 is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 35% power-added efficiency at a +8V operating voltage. The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O222GSM7H

The O222GSM7H is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 42% of power-added efficiency at a +8V operating voltage. The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O222SM5

The O222SM5 is a GaAs pHEMT monolithic integrated power amplifier with an operating frequency of 8-12 GHz. Under the +8V operating voltage, 20% 0dB gain, +29dBm saturated output power and 28% power additional efficiency can be provided. The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O242SM4

The O242SM4 is a 2.2-3.5GHz power amplifier that operates from a single supply and provides 23dB of gain and 25dBm of saturated output power at an operating voltage of +5V.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O253SM7H

The O253SM7H is a GaN integrated power amplifier operating from 8 to 12 GHz. With a +28V operating voltage, it provides 22dB of power gain, 43dBm of saturated output power, and 38% power-added efficiency. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O259SM7H

The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided. The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Switch O121SM4
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Integrated Switch O110DSM4

O110DSM4 is an absorption single-pole single-throw switch, working frequency covers 0.01 ~ 12GHz. The switch provides greater than 50dB isolation and less than 2.8dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O121SM4
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Integrated Switch O110DSM4M

The O110DSM4M is an absorption single-pole-single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O121SM4
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Integrated Switch O110SM3B

The O110SM3B is a GaAs Absorption Single-pole Single-throw Switch that provides greater than 40dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package for hermetic encapsulation, and the pin pad surface is gold-plated for reflow soldering.