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5G
GaN Monolithic Integrated Power Amplifier O254
The 0254 is a GaN monolithic integrated power amplifier chip operating at 14.5-17.0 Ghz. It provides 20dB power gain and 42dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 34%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O255
The O255 is a GaN monolithic integrated power amplifier chip operating at 14.0-18.0 Ghz. It provides 20dB power gain and 42dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating power. 36%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O258
The O258 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 22dB power gain and 43dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. Power-added efficiency 45%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O259
The O259 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB of power gain and 41dBm of saturated output power. Power-added efficiency 48%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
Integrated Driver Amplifier O228GFN5
The O228GFN5 is a driver amplifier that operates from 6 to 18 GHz. It provides 15dB small signal gain, 18dBm P-1 output power, and 20% power added efficiency at +5V operating voltage.
The amplifier uses a 5x5mm surface-mount non-leaded ceramic package, hermetically sealed, and is suitable for reflow soldering installations.
Integrated Driver Amplifier O228GSM3
The O228GSM3 is a monolithic mid-power amplifier operating at 6-15GHz. It provides 15dB gain, 18dBm P1dB output power, and 20% power-added efficiency at a single-supply 5V supply voltage.
The amplifier uses a 3x3mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Driver Amplifier O228GSM3B
O228GSM3B is a monolithic medium power amplifier operating at 6-18GHz. It provides 15dB gain, 18dBm P1dB output power, and 20% power-added efficiency at a single-supply 5V supply voltage.
The amplifier uses a 3x3mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Driver Amplifier O553SM4
The O553SM4 is a low noise amplifier operating at 0.8-6.5 GHz. It provides 21dB gain and 17dBm P1dB output power at 65mA operating current.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation.
The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Driver Amplifier O553SM4M
The O553SM4M is a low noise amplifier operating at 1-6GHz. It provides 20dB gain and 17dBm P1dB output power at 60mA operating current.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Driver Amplifier O553SM84
The O553SM84 is an integrated amplifier operating at 0.8-6.0 GHz. Built-in bias circuit provides 20dB gain and 17dBm P1dB output power at 65mA operating current.
The amplifier adopts 5x7mm surface-mounting cermet shell, fully sealed, and the bottom surface needs to be grounded in a large area. It is suitable for the reflow soldering installation process, and the lead wire must be hand-welded.
Integrated Driver Amplifier O555SM4
The O555SM4 is a driver amplifier that operates from 2 to 5.5 GHz. At a working current of 72mA, it can provide 15dB gain and 17dBm P1dB output power.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation and is suitable for reflow solder mounting processes.
Integrated Driver Amplifier O556SM4
The O556SM4 is a driver amplifier that operates from 2 to 6 GHz. It provides 24dB gain and 16dBm P1dB output power at 50A operating current.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation and is suitable for reflow solder mounting processes.
Integrated Driver Amplifier O556SM5H
The O556SM5H is a driver amplifier that operates from 2 to 6 GHz. It provides 23dB small signal gain and 15dBm P-1 output power at +5V operating voltage. Noise figure is typically 3dB.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation and is suitable for reflow solder mounting processes.
Integrated Driver Amplifier O556SM84
The O556SM84 is an integrated amplifier operating at 2.0-6.0 GHz. Built-in bias circuit provides 24dB gain and 14dBm P1dB output power at 50mA operating current.
The amplifier adopts 5x7mm surface-mounting cermet shell, fully sealed, and the bottom surface needs to be grounded in a large area. It is suitable for the reflow soldering installation process, and the lead wire must be hand-welded.
Integrated Driver Amplifier O566FN5
The O566FN5 is a driver amplifier that operates from 10 to 15 GHz. Provides 28dB of small signal gain and 14.5dBm of P-1 output power at +5V operating voltage.
The amplifier uses a 5x5mm surface-mount non-leaded ceramic package, hermetically sealed, and is suitable for reflow soldering installations.
Integrated Driver Amplifier O567SM5H
The O567SM5H is a driver amplifier that operates from 10 to 15 GHz. It provides 22dB small signal gain and 12dBm P-1 output power at a +5V operating voltage.
The amplifier uses a 5x5mm surface-mount non-leaded ceramic package, hermetically sealed, and is suitable for reflow soldering installations.