GaAs Monolithic Integrated 0 Degree Power O510
O510 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range from DC to 40 GHz, and the isolation is greater than 15dB. It is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Categories: GaAs Monolithic Integrated 0 Degree Power, GaAs 砷化镓, 射频芯片
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