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GaAs Monolithic Integrated Power Amplifier O241
The O241 is a 1.2-1.4GHz GaAs monolithic integrated power amplifier chip, which provides 21dB power gain and 26dBm saturated output power at + 5V operating voltage with power added efficiency of 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip is metallized for eutectic sintering.
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GaN Monolithic Integrated Driver Amplifier O571
The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O238
The O238 is a GaAs monolithic integrated power amplifier chip operating at 24.2-27.0GHz delivering 16dB of power gain and 33dBm of saturated output power at 6V with 27% additional power efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O234
The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O224
The O224 is a GaAs monolithic integrated power amplifier operating at 12.8 to 14.6GHz and delivers 23dB of power gain and 32dBm of saturated output power at a + 5V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O568
The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O242
The O242 is a GaAs monolithic integrated power amplifier chip operating at 2.2 ~ 3.5GHz, which provides 22dB power gain and 29dBm saturated output power at + 9V operating voltage with power added efficiency of 35%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.