GaAs Monolithic Integrated Switch O111
O111 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 6GHz. The switching chip can provide less than 1.5dB insertion loss and greater than 60dB isolation across the operating requency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use.The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Categories: GaAs Monolithic Integrated Switch, GaAs 砷化镓, 射频芯片
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The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O227
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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