Integrated Switch O110DSM4
O110DSM4 is an absorption single-pole single-throw switch, working frequency covers 0.01 ~ 12GHz. The switch provides greater than 50dB isolation and less than 2.8dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Related products
GaN Monolithic Integrated Driver Amplifier O570
The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O243
The O243 is a 1.2 ~ 1.4GHz GaAs monolithic integrated power amplifier chip that provides 22dB power gain and 26dBm saturated output power at +5 V operating voltage with 36% power added efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O242
The O242 is a GaAs monolithic integrated power amplifier chip operating at 2.2 ~ 3.5GHz, which provides 22dB power gain and 29dBm saturated output power at + 9V operating voltage with power added efficiency of 35%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O212
The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1193
The O1193 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 24dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 40%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Driver Amplifier O579
The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.