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Monolithic Integrated (Dual) Bidirectional Amplifier O589
The O589 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1.0 to 4.5 GHz. It provides 13dB of gain and 17dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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GaAs Monolithic Integrated Power Amplifier O243
The O243 is a 1.2 ~ 1.4GHz GaAs monolithic integrated power amplifier chip that provides 22dB power gain and 26dBm saturated output power at +5 V operating voltage with 36% power added efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O212
The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O220
The O220 is a GaAs monolithic integrated power amplifier chip operating at 15.0-17.5 Ghz delivering 20dB of power gain and 36dBm of saturated output power with 100us pulse width, 10% duty cycle, and +8 V operation. The power added efficiency 25%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1195
The O1195 is a GaN monolithic integrated power amplifier chip operating at
4.4-5.1GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 19dB of power gain and 40dBm of saturated output power.
Power-added efficiency 48%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O562
The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.