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无源产品
5G
Monolithic Integrated (Dual) Bidirectional Amplifier O592
The O592 is a GaAs monolithic integrated low bi-directional amplifier chip that operates from 2 to 20 GHz and provides 14dB gain and 13dBm P1dB output power at a +5V, 65mA operating current.
The amplifier chip uses on-chip via metallization process to ensure good grounding, the back of the chip is metallized, suitable for eutectic sintering or conductive adhesive bonding process.
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O227
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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