喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O112
O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O118
O118 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 12GHz. The switch chip can provide less than 1.0dB insertion loss and greater than 36dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.