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O111 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 6GHz. The switching chip can provide less than 1.5dB insertion loss and greater than 60dB isolation across the operating requency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use.The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.