Integrated Driver Amplifier O556SM84
The O556SM84 is an integrated amplifier operating at 2.0-6.0 GHz. Built-in bias circuit provides 24dB gain and 14dBm P1dB output power at 50mA operating current.
The amplifier adopts 5x7mm surface-mounting cermet shell, fully sealed, and the bottom surface needs to be grounded in a large area. It is suitable for the reflow soldering installation process, and the lead wire must be hand-welded.
Related products
GaN Monolithic Integrated Driver Amplifier O571
The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O220
The O220 is a GaAs monolithic integrated power amplifier chip operating at 15.0-17.5 Ghz delivering 20dB of power gain and 36dBm of saturated output power with 100us pulse width, 10% duty cycle, and +8 V operation. The power added efficiency 25%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O562
The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O251
The O251 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.5GHz. It provides 22dB power gain and 36dBm saturated output power at a continuous wave, +28V operating voltage, and a power-added efficiency of 48%.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1198
The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the
power-added efficiency is 47%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆


接头&转接头
校准件


腔体滤波器
无源产品
5G