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5G
Integrated Power Amplifier O222GSM7H
The O222GSM7H is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 42% of power-added efficiency at a +8V operating voltage.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
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