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5G| Image | SKU | Input return loss | Max.Frequency band (GHz) | Min.Frequency band (GHz) | Output P-1 | Output return loss | Price | Buy | hf:att:pa_input-return-loss | hf:att:pa_max-frequency-band-ghz | hf:att:pa_min-frequency-band-ghz | hf:att:pa_output-p-1 | hf:att:pa_output-return-loss |
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Integrated Power Amplifier O1193SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1194SM7H
The O1193SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. At +28V operating voltage, 21dB power gain, 40dBm saturated output power, and 45%power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1195SM7H
The O1195SM7H is a GaN integrated power amplifier operating from 4.4 to 5.1 Ghz. At +28V operating voltage, it provides 19dB of power gain, 40dBm of saturated output power, and 47% of power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1196SM7H
The O1196SM7H is a GaN integrated power amplifier operating from 7 to 9 GHz.It provides 21dB of power gain, 41dBm of saturated output power, and 42% of power-added efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1198SM7H
The O1198SM7H is a GaN integrated power amplifier operating from 5 to 6 GHz. It provides 21dB power gain, 41dBm saturated output power, and 45% power efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O222GSM5
The O222GSM5 is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 35% power-added efficiency at a +8V operating voltage.
The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O222GSM7H
The O222GSM7H is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 42% of power-added efficiency at a +8V operating voltage.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O222SM5
The O222SM5 is a GaAs pHEMT monolithic integrated power amplifier with an operating frequency of 8-12 GHz. Under the +8V operating voltage, 20% 0dB gain, +29dBm saturated output power and 28% power additional efficiency can be provided.
The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O242SM4
The O242SM4 is a 2.2-3.5GHz power amplifier that operates from a single supply and provides 23dB of gain and 25dBm of saturated output power at an operating voltage of +5V.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation.
The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Power Amplifier O253SM7H
The O253SM7H is a GaN integrated power amplifier operating from 8 to 12 GHz. With a +28V operating voltage, it provides 22dB of power gain, 43dBm of saturated output power, and 38% power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.