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GaAs Monolithic Integrated Power Amplifier O220
The O220 is a GaAs monolithic integrated power amplifier chip operating at 15.0-17.5 Ghz delivering 20dB of power gain and 36dBm of saturated output power with 100us pulse width, 10% duty cycle, and +8 V operation. The power added efficiency 25%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1195
The O1195 is a GaN monolithic integrated power amplifier chip operating at
4.4-5.1GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 19dB of power gain and 40dBm of saturated output power.
Power-added efficiency 48%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O248
The O248 is a GaN monolithic integrated power amplifier chip operating at 19-21GHz. It provides 15dB power gain and 40dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power added efficiency is 29. %.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O234
The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O238
The O238 is a GaAs monolithic integrated power amplifier chip operating at 24.2-27.0GHz delivering 16dB of power gain and 33dBm of saturated output power at 6V with 27% additional power efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O568
The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.