产品展示

O506 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz. The isolation degree is more than 17dB, and it is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O507 type GaAs monolithic 4-way zero-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 22~32 GHz. The isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O510 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range from DC to 40 GHz, and the isolation is greater than 15dB. It is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.