GaAs 砷化镓

O110 is an absorption type gallium arsenide pHEMT single-pole single-throw switch chip, working frequency covers DC ~ 20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O114 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 30GHz. The switch chip can provide less than 2.2dB insertion loss and greater than 26dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O119 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 15GHz. The switch chip can provide less than 1.5dB insertion loss and greater than 38dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O129 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 40GHz. The switch chip can provide less than 2.5dB insertion loss and more than 25dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

O142 is a reflective gallium arsenide (PIN) single-pole, single-throw single-throw single-throw MMIC switch chip with an operating frequency of 4 to 26 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.